US 12,250,827 B2
Magneto-resistive random access memory with substitutional bottom electrode
Oscar van der Straten, Guilderland Center, NY (US); Lisamarie White, Staatsburg, NY (US); Willie Lester Muchrison, Jr., Troy, NY (US); and Chih-Chao Yang, Glenmont, NY (US)
Assigned to International Business Machines Corporation, Armonk, NY (US)
Filed by International Business Machines Corporation, Armonk, NY (US)
Filed on Dec. 16, 2021, as Appl. No. 17/644,570.
Prior Publication US 2023/0200086 A1, Jun. 22, 2023
Int. Cl. H10B 61/00 (2023.01); G11C 11/16 (2006.01); H10N 50/01 (2023.01); H10N 50/80 (2023.01); H10N 50/85 (2023.01)
CPC H10B 61/00 (2023.02) [G11C 11/161 (2013.01); H10N 50/01 (2023.02); H10N 50/80 (2023.02); H10N 50/85 (2023.02)] 20 Claims
OG exemplary drawing
 
1. A memory device, comprising:
a magnetic tunnel junction pillar above a bottom electrode, the bottom electrode including a metal-oxide region in contact with a first portion of the magnetic tunnel junction pillar and a metal region surrounding the metal-oxide region; and
a sidewall spacer along sidewalls of the magnetic tunnel junction pillar, the metal region being in contact with a bottom surface of the sidewall spacer and a second portion of the magnetic tunnel junction pillar.