US 12,250,818 B2
Methods of forming charge-blocking material, and integrated assemblies having charge-blocking material
Pei Qiong Cheung, Singapore (SG); Zhixin Xu, Singapore (SG); and Yuan Fang, Singapore (SG)
Assigned to Micron Technology, Inc., Boise, ID (US)
Filed by Micron Technology, Inc., Boise, ID (US)
Filed on Jan. 27, 2022, as Appl. No. 17/586,682.
Application 17/586,682 is a division of application No. 16/704,176, filed on Dec. 5, 2019, granted, now 11,271,006.
Prior Publication US 2022/0157850 A1, May 19, 2022
Int. Cl. H10B 43/27 (2023.01); H10B 43/10 (2023.01)
CPC H10B 43/27 (2023.02) [H10B 43/10 (2023.02)] 10 Claims
OG exemplary drawing
 
1. An integrated assembly, comprising:
a first deck having first memory cells arranged in first tiers disposed one atop another;
a second deck over the first deck; the second deck having second memory cells arranged in second tiers disposed one atop another;
a charge-blocking structure extending along the first and second decks; the charge-blocking structure having a first region along the first deck and a second region along the second deck, and having a detectable location where the first region joins to the second region;
a pillar passing through the first and second decks and being adjacent the charge-blocking structure; the pillar comprising a charge-storage material adjacent the charge-blocking structure, a dielectric material adjacent the charge-storage material, and a channel material adjacent the dielectric material; and
wherein the first and second regions of the charge-blocking structure comprise a same composition as one another and comprise different lateral thicknesses relative to one another.