US 12,250,814 B2
Through-stack contact via structures for a three-dimensional memory device and methods of forming the same
Kenichi Shimomura, Yokkaichi (JP); and Takayuki Maekura, Yokkaichi (JP)
Assigned to Sandisk Technologies, Inc., Milpitas, CA (US)
Filed by SANDISK TECHNOLOGIES LLC, Addison, TX (US)
Filed on Jun. 13, 2022, as Appl. No. 17/806,579.
Application 17/806,579 is a continuation in part of application No. 16/881,401, filed on May 22, 2020, granted, now 11,367,736.
Prior Publication US 2022/0302146 A1, Sep. 22, 2022
Int. Cl. H01L 23/522 (2006.01); G11C 16/04 (2006.01); H01L 23/528 (2006.01); H10B 41/10 (2023.01); H10B 41/27 (2023.01); H10B 41/35 (2023.01); H10B 43/10 (2023.01); H10B 43/27 (2023.01); H10B 43/35 (2023.01)
CPC H10B 41/35 (2023.02) [G11C 16/0483 (2013.01); H01L 23/5226 (2013.01); H01L 23/5283 (2013.01); H10B 41/10 (2023.02); H10B 41/27 (2023.02); H10B 43/10 (2023.02); H10B 43/27 (2023.02); H10B 43/35 (2023.02)] 20 Claims
OG exemplary drawing
 
1. A three-dimensional memory device, comprising:
a first-tier alternating stack of first insulating layers and first electrically conductive layers;
a second-tier alternating stack of second insulating layers and second electrically conductive layers that overlies the first-tier alternating stack;
a vertically alternating sequence of insulating plates and dielectric material plates located over the first-tier alternating stack and laterally surrounded by the second-tier alternating stack;
memory openings vertically extending through each layer within the first-tier alternating stack and the second-tier alternating stack;
memory opening fill structures located in the memory openings and comprising a respective vertical semiconductor channel and a respective vertical stack of memory elements;
first contact via structures vertically extending through the vertically alternating sequence and contacting a respective one of the first electrically conductive layers; and
second contact via structures contacting a respective one of the second electrically conductive layers.