US 12,250,812 B2
Integrated assemblies and methods of forming integrated assemblies
Jordan D. Greenlee, Boise, ID (US); Nancy M. Lomeli, Boise, ID (US); John D. Hopkins, Meridian, ID (US); Jiewei Chen, Boise, ID (US); Indra V. Chary, Boise, ID (US); Jun Fang, Boise, ID (US); Vladimir Samara, Boise, ID (US); Kaiming Luo, Singapore (SG); Rita J. Klein, Boise, ID (US); Xiao Li, Boise, ID (US); and Vinayak Shamanna, Boise, ID (US)
Assigned to Micron Technology, Inc., Boise, ID (US)
Filed by Micron Technology, Inc., Boise, ID (US)
Filed on Jan. 9, 2023, as Appl. No. 18/094,906.
Application 18/094,906 is a division of application No. 16/988,156, filed on Aug. 7, 2020, granted, now 11,600,630.
Prior Publication US 2023/0164991 A1, May 25, 2023
Int. Cl. H01L 21/306 (2006.01); G11C 5/02 (2006.01); G11C 5/06 (2006.01); G11C 16/04 (2006.01); H10B 41/27 (2023.01); H10B 43/27 (2023.01); H10B 43/30 (2023.01)
CPC H10B 41/27 (2023.02) [G11C 5/025 (2013.01); G11C 5/06 (2013.01); G11C 16/0408 (2013.01); G11C 16/0466 (2013.01); H01L 21/30625 (2013.01); H10B 43/27 (2023.02); H10B 43/30 (2023.02)] 20 Claims
OG exemplary drawing
 
1. A method of forming an integrated assembly, comprising:
forming a construction to include a slit which extends through a stack of alternating insulative levels and conductive levels;
forming a slit extending from an upper surface over the stack and through the stack;
forming a layer of first material within the slit to partially fill the slit, a cavity remaining within the partially-filled slit, the layer of first material extending across a base of the slit and having inner and outer sidewalls extending to the upper surface of the stack;
forming an oxide along interior sidewalls of the cavity and retaining an open area within the cavity;
prior to deposition any additional material within the open area, widening an upper region of the open area of the cavity while retaining the height of the layer of first material and retaining the first material along the base of the slit; and
after the widening, filling the cavity with a second material.