US 12,250,807 B2
Semiconductor device using different types of through-silicon-vias
Jaesan Kim, Suwon-si (KR); Seunghan Woo, Seoul (KR); Haesuk Lee, Seongnam-si (KR); Youngcheon Kwon, Hwaseong-si (KR); and Reum Oh, Hwaseong-si (KR)
Assigned to SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed by SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed on Oct. 7, 2021, as Appl. No. 17/496,498.
Claims priority of application No. 10-2020-0138654 (KR), filed on Oct. 23, 2020.
Prior Publication US 2022/0130841 A1, Apr. 28, 2022
Int. Cl. H10B 12/00 (2023.01); H01L 23/48 (2006.01); H01L 23/528 (2006.01); H01L 29/8605 (2006.01); H01L 29/94 (2006.01)
CPC H10B 12/50 (2023.02) [H01L 23/481 (2013.01); H01L 23/5286 (2013.01); H01L 29/8605 (2013.01); H01L 29/94 (2013.01); H10B 12/30 (2023.02)] 18 Claims
OG exemplary drawing
 
1. A semiconductor device comprising:
a semiconductor structure comprising a semiconductor substrate including an active zone having a channel;
a through silicon via (TSV) structure including a power TSV configured to transmit power and a signal TSV configured to transmit a signal, the TSV structure penetrating the semiconductor substrate; and
power and signal keep-out zones each located a predetermined distance away from the TSV structure and bounded by the active zone to prevent deterioration of electrical characteristics,
wherein the power keep-out zone includes a first element area located a first distance away from the power TSV that includes a circuit,
wherein the signal keep-out zone includes a second element area located a second distance away from the signal TSV that includes a circuit, and
wherein the second distance is longer than the first distance.