US 12,250,519 B2
MEMS capacitance microphone and manufacturing method thereof
Chien-Hsing Huang, Shenzhen (CN)
Assigned to Qsensing Microelectronics Co., Ltd, Shenzhen (CN)
Filed by Qsensing Microelectronics Co., Ltd, Shenzhen (CN)
Filed on Aug. 24, 2022, as Appl. No. 17/894,181.
Claims priority of application No. 202210648175.8 (CN), filed on Jun. 8, 2022.
Prior Publication US 2023/0403514 A1, Dec. 14, 2023
Int. Cl. H04R 19/04 (2006.01); B81B 3/00 (2006.01); B81C 1/00 (2006.01); H04R 7/04 (2006.01); H04R 7/18 (2006.01); H04R 31/00 (2006.01)
CPC H04R 19/04 (2013.01) [B81B 3/001 (2013.01); B81C 1/00968 (2013.01); H04R 7/04 (2013.01); H04R 7/18 (2013.01); H04R 31/003 (2013.01); H04R 31/006 (2013.01); B81B 2201/0257 (2013.01); B81B 2203/0127 (2013.01); B81B 2203/04 (2013.01); B81C 2201/0109 (2013.01); H04R 2201/003 (2013.01)] 9 Claims
OG exemplary drawing
 
1. A MEMS capacitance microphone, comprising:
a substrate provided with a cavity and a plurality of gate structures, the cavity penetrating through the substrate, the plurality of gate structures extending from an inner wall of the cavity to the center of the cavity in a centric shape;
a diaphragm vibratably arranged on one side of the substrate and including a main deformation zone and a non-main deformation zone surrounding the main deformation zone;
a back plate structure arranged on one side of the diaphragm and the diaphragm located between the substrate and the back plate structure; and
a plurality of support structures arranged on the back plate structure, penetrating the periphery of the main deformation zone of the diaphragm, and respectively abutting against the plurality of gate structures, wherein the ends, extending towards the center, of the plurality of gate structures are correspondingly distributed on the periphery of the main deformation zone of the diaphragm, and the plurality of gate structures respectively correspond to the plurality of support structures, so that the plurality of support structures are stably supported by the plurality of gate structures.