US 12,250,503 B2
Prediction of electrical properties of a semiconductor specimen
Ofer Adan, Rehovot (IL)
Assigned to Applied Materials Israel Ltd., Rehovot (IL)
Filed by Applied Materials Israel Ltd., Rehovot (IL)
Filed on Dec. 24, 2020, as Appl. No. 17/134,025.
Prior Publication US 2022/0210525 A1, Jun. 30, 2022
Int. Cl. H04Q 9/00 (2006.01); G01R 31/26 (2020.01); H01L 21/66 (2006.01)
CPC H04Q 9/00 (2013.01) [G01R 31/26 (2013.01); H01L 22/12 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A system comprising at least one processor and memory circuitry (PMC), the at least one PMC being configured to:
obtain metrology data Dmetrology informative of a plurality of structural parameters of a semiconductor specimen;
obtain a model operative to:
receive an input comprising one or more values for at least some of said structural parameters of the semiconductor specimen, and
provide an output comprising a prediction for one or more electrical properties of the semiconductor specimen;
use the model and Dmetrology to determine, for at least one given electrical property of the specimen, one or more given structural parameters among the plurality of structural parameters, which affect the at least one given electrical property more than one or more other structural parameters of the plurality of structural parameters; and
generate a recipe for an examination tool, wherein the recipe enables a ratio between a first acquisition rate of data informative of the one or more given structural parameters, and a second acquisition rate of data informative of the one or more other structural parameters of the plurality of structural parameters, to meet a criterion.