US 12,250,014 B2
THz impulse and frequency comb generation using reverse recovery of PIN diode
Aydin Babakhani, Los Angeles, CA (US); and Seyedmohammadreza Razavian, San Diego, CA (US)
Assigned to The Regents of the University of California, Oakland, CA (US)
Appl. No. 17/596,963
Filed by The Regents of the University of California, Oakland, CA (US)
PCT Filed Jun. 26, 2020, PCT No. PCT/US2020/039800
§ 371(c)(1), (2) Date Dec. 22, 2021,
PCT Pub. No. WO2020/264279, PCT Pub. Date Dec. 30, 2020.
Claims priority of provisional application 62/866,954, filed on Jun. 26, 2019.
Prior Publication US 2022/0247437 A1, Aug. 4, 2022
Int. Cl. H04B 1/10 (2006.01); H01Q 9/28 (2006.01); H01Q 13/10 (2006.01); H03D 7/12 (2006.01); H03K 3/01 (2006.01)
CPC H04B 1/10 (2013.01) [H01Q 9/28 (2013.01); H01Q 13/10 (2013.01); H03D 7/12 (2013.01); H03K 3/01 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A frequency-comb radiator, comprising:
a PIN (positive, intrinsic, negative) diode;
an on-chip antenna that radiates pulses, wherein the PIN diode is coupled to the on-chip antenna through a matching network; and
a driver stage switched by an input signal through a series of buffers, the driver stage comprising a first transistor and a first transmission line, where the first transmission line is connected to an end side of the PIN diode and to the first transistor, and the first transmission line isolates the PIN diode from the first transistor;
wherein a reverse-recovery of the PIN diode caused by the switching of the driver stage is used to generate Terahertz (THz) pulses that are radiated through the on-chip antenna; and
wherein the combination of the transistor and transmission line in the driver stage causes the PIN diode to operate in a nonlinear region and the nonlinearity of the PIN diode generates the THz-pulses that are radiated through the on-chip antenna through the matching network.