US 12,249,980 B2
Circuit and method for improving efficiency by use of external inductor for temperature control
Wen Nan Huang, Hsinchu County (TW); Ching Kuo Chen, Hsinchu County (TW); Shiu Hui Lee, Hsinchu County (TW); Hsiang Chi Meng, Hsinchu County (TW); and Chih Ming Yu, Hsinchu County (TW)
Assigned to POTENS SEMICONDUCTOR CORP., Zhubei (TW)
Filed by Potens Semiconductor Corp., Hsinchu County (TW)
Filed on Jul. 17, 2023, as Appl. No. 18/222,668.
Claims priority of application No. 111150041 (TW), filed on Dec. 26, 2022.
Prior Publication US 2024/0223184 A1, Jul. 4, 2024
Int. Cl. H03K 17/00 (2006.01); H03F 3/45 (2006.01); H03K 17/10 (2006.01); H03K 17/14 (2006.01); H03K 17/567 (2006.01); H03K 17/64 (2006.01); H03K 17/73 (2006.01)
CPC H03K 17/567 (2013.01) [H03F 3/45475 (2013.01); H03K 17/10 (2013.01); H03K 17/14 (2013.01); H03K 17/64 (2013.01); H03K 17/731 (2013.01)] 10 Claims
OG exemplary drawing
 
1. A circuit for improving efficiency by use of temperature control, electrically connected to a field effect transistor, comprising:
an inductor electrically connected to a drain of the field effect transistor;
a differential amplifier module connected in parallel with the inductor to capture a voltage signal of the inductor;
a microprocessing unit connected to the differential amplifier module for converting the voltage signal in a current signal through integration, wherein the microprocessing unit calculates a power consumption of the field effect transistor and an operating temperature of the field effect transistor based on the power consumption; and
a variable voltage gate drive module electrically connected to the microprocessing unit and a gate and a source of the field effect transistor for regulating an input voltage of the gate based on the operating temperature.