US 12,249,976 B2
Power switch circuit and non-volatile memory device comprising the same
Jung Kyu Jang, Hwaseong-si (KR); and Suk-Soo Pyo, Hwaseong-si (KR)
Assigned to Samsung Electronics Co., Ltd., (KR)
Filed by Samsung Electronics Co., Ltd., Suwon-si (KR)
Filed on Oct. 28, 2022, as Appl. No. 18/050,489.
Claims priority of application No. 10-2021-0154576 (KR), filed on Nov. 11, 2021.
Prior Publication US 2023/0142636 A1, May 11, 2023
Int. Cl. G11C 16/30 (2006.01); H03K 17/0812 (2006.01)
CPC H03K 17/08122 (2013.01) [G11C 16/30 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A power switch circuit comprising:
a multi-voltage providing circuit configured to receive a first voltage different from zero and a second voltage greater than the first voltage, output a third voltage corresponding to the first voltage to a first output terminal, and output a fourth voltage corresponding to the second voltage to a second output terminal different from the first output terminal; and
a leakage current prevention circuit configured to cut off a leakage current flowing through the multi-voltage providing circuit,
wherein the multi-voltage providing circuit comprises a first inverter which is driven using the second voltage, and
wherein the leakage current prevention circuit is configured to cut off a leakage current flowing through the first inverter in response to both the first voltage and the second voltage being provided to the multi-voltage providing circuit.