| CPC H03H 9/205 (2013.01) [H03H 3/02 (2013.01); H03H 9/02015 (2013.01); H03H 9/131 (2013.01); H03H 2003/021 (2013.01)] | 18 Claims |
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1. A film bulk acoustic resonator (FBAR) chip and package structure with improved power tolerance, comprising:
a first substrate having:
a plurality of FBARs each having a bottom electrode, a piezoelectric material, and a top electrode, and
first bonding pads connected to the bottom electrodes or the top electrodes of the plurality of FBARs; and
a second substrate having:
a plurality of vias passing therethrough,
second bonding pads located on one end surface of the plurality of vias facing the first substrate, and
external connection pads located on another end surface of the plurality of vias which does not face the first substrate,
wherein the first substrate and the second substrate are bonded by means of bonding of the first bonding pads and the second bonding pads to each other,
at least some of the bottom electrodes are connected to the first bonding pads through piezoelectric layer vias filled with a conductive material, and
the plurality of vias on the second substrate comprise first vias connected to signal or ground wiring through the external connection pads, and second vias with no connection to any signal or ground wiring, and
wherein the first substrate comprises air cavities therein which are formed under a portion of the bottom electrodes stacked under the piezoelectric material and the top electrode of each FBAR, and at least a portion of the heat sink groove is formed between the air cavities, the heat sink groove being filled with a thermal dissipation material.
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