US 12,249,807 B2
Laser device and method for manufacturing a laser device
Matthias Sperl, Mintraching (DE); Hubert Halbritter, Dietfurt-Toeging (DE); Peter Brick, Regensburg (DE); Philipp McCaw, Nittendorf (DE); and Dennis Sprenger, Röthenbach a.d. Pegnitz (DE)
Assigned to OSRAM OPTO SEMICONDUCTORS GMBH, Regensburg (DE)
Appl. No. 17/414,671
Filed by OSRAM Opto Semiconductors GmbH, Regensburg (DE)
PCT Filed Dec. 18, 2019, PCT No. PCT/EP2019/085946
§ 371(c)(1), (2) Date Jun. 16, 2021,
PCT Pub. No. WO2020/127480, PCT Pub. Date Jun. 25, 2020.
Claims priority of application No. 10 2018 133 217.3 (DE), filed on Dec. 20, 2018; and application No. 10 2019 100 794.1 (DE), filed on Jan. 14, 2019.
Prior Publication US 2022/0021189 A1, Jan. 20, 2022
Int. Cl. H01S 5/42 (2006.01); G02B 1/00 (2006.01); G02B 27/09 (2006.01); H01S 5/02345 (2021.01); H01S 5/183 (2006.01)
CPC H01S 5/423 (2013.01) [G02B 1/002 (2013.01); G02B 27/0922 (2013.01); H01S 5/02345 (2021.01); H01S 5/18341 (2013.01)] 16 Claims
OG exemplary drawing
 
1. A laser device comprising:
a carrier;
an optoelectronic component arranged on the carrier, which is configured to emit laser radiation; and
an optical element configured to shape the laser radiation emitted by the optoelectronic component,
wherein the optical element comprises a first layer at least partially transparent to the laser radiation and having a first refractive index and a second layer at least partially transparent to the laser radiation and having a second refractive index,
wherein the first layer is applied to the optoelectronic component and comprises a surface with an imprinted structure,
wherein the second layer is applied to the surface comprising the imprinted structure of the first layer, and
wherein the optoelectronic component is embedded in a layer of electrically insulating material and the height of the electrically insulating material substantially corresponds to the height of the side edges of the optoelectronic component such that the top surface of the layer of electrically insulating material is substantially flush with a main surface of the optoelectronic component.