US 12,249,679 B2
Radiation emitting semiconductor chip and method for producing a radiation emitting semiconductor chip
Fabian Kopp, Tanjung Tokong Penang (MY); and Attila Molnar, Gelugor Penang (MY)
Assigned to OSRAM OPTO SEMICONDUCTORS GMBH, Regensburg (DE)
Appl. No. 17/630,534
Filed by OSRAM Opto Semiconductors GmbH, Regensburg (DE)
PCT Filed Jul. 28, 2020, PCT No. PCT/EP2020/071250
§ 371(c)(1), (2) Date Jan. 27, 2022,
PCT Pub. No. WO2021/018884, PCT Pub. Date Feb. 4, 2021.
Claims priority of application No. 102019120444.5 (DE), filed on Jul. 29, 2019.
Prior Publication US 2022/0278259 A1, Sep. 1, 2022
Int. Cl. H01L 33/60 (2010.01); H01L 33/00 (2010.01); H01L 33/62 (2010.01)
CPC H01L 33/60 (2013.01) [H01L 33/005 (2013.01); H01L 33/62 (2013.01); H01L 2933/0058 (2013.01)] 12 Claims
OG exemplary drawing
 
1. A radiation emitting semiconductor chip comprising:
a semiconductor layer sequence having an active region configured to generate electromagnetic radiation;
a first dielectric mirror layer arranged above the semiconductor layer sequence; and
a second dielectric mirror layer arranged above the first dielectric mirror layer;
an intermediate layer arranged between the first dielectric mirror layer and the second dielectric mirror layer;
wherein:
the first dielectric mirror layer has at least one first recess;
a first current spreading layer is arranged in the first recess and above the first dielectric mirror layer;
the first current spreading layer is formed transparent to the electromagnetic radiation generated;
the second dielectric mirror layer has at least one second recess extending up to the first current spreading layer;
the first recess does not overlap with the second recess in lateral direction in plan view; and
the intermediate layer completely fills the first recess and/or the second recess extends completely through the intermediate layer.
 
8. A method for producing a radiation emitting semiconductor chip, wherein the method comprises:
providing a semiconductor layer sequence having an active region configured to generate electromagnetic radiation;
applying a first dielectric mirror layer above the semiconductor layer sequence;
generating a first recess in the first dielectric mirror layer which completely penetrates the first dielectric mirror layer;
applying a first current spreading layer in the first recess and above the first dielectric mirror layer;
applying a second dielectric mirror layer above the first dielectric mirror layer and the first current spreading layer;
generating a second recess in the second dielectric mirror layer which extends up to the first current spreading layer;
wherein:
an intermediate layer is arranged between the first dielectric mirror layer and the second dielectric mirror layer;
the first recess does not overlap with the second recess in lateral direction in plan view;
the first current spreading layer is formed transparent to the electromagnetic radiation generated; and
the intermediate layer completely fills the first recess and/or the second recess extends completely through the intermediate layer.
 
12. A radiation emitting semiconductor chip comprising:
a semiconductor layer sequence having an active region configured to generate electromagnetic radiation;
a first dielectric mirror layer arranged above the semiconductor layer sequence; and
a second dielectric mirror layer arranged above the first dielectric mirror layer;
wherein:
the first dielectric mirror layer has at least one first recess;
a first current spreading layer is arranged in the first recess and above the first dielectric mirror layer;
the first current spreading layer is formed transparent to the electromagnetic radiation generated;
the second dielectric mirror layer has at least one second recess extending up to the first current spreading layer;
the first recess does not overlap with the second recess in lateral direction in plan view; and
the second recess completely surrounds the first recess in the lateral direction.