US 12,249,675 B2
Semiconductor device
Tatsuro Uchida, Tokyo (JP); and Takayuki Sumida, Kanagawa (JP)
Assigned to Canon Kabushiki Kaisha, Tokyo (JP)
Filed by CANON KABUSHIKI KAISHA, Tokyo (JP)
Filed on Jun. 9, 2021, as Appl. No. 17/342,734.
Claims priority of application No. 2020-103581 (JP), filed on Jun. 16, 2020.
Prior Publication US 2021/0391505 A1, Dec. 16, 2021
Int. Cl. H01L 33/58 (2010.01); H01L 33/38 (2010.01); H01L 33/42 (2010.01)
CPC H01L 33/42 (2013.01) [H01L 33/382 (2013.01); H01L 33/58 (2013.01)] 23 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a substrate provided with a plurality of pixel electrodes and a control electrode;
a functional layer provided over the plurality of pixel electrodes;
a transparent electrode provided over the functional layer;
an insulating layer provided so as to cover an upper surface and a side surface of a laminate including the functional layer and the transparent electrode, and having a first opening reaching the transparent electrode;
a light-shielding conductive layer provided so as to cover the side surface of the laminate with the insulating layer interposed therebetween, and
a microlens layer provided over the transparent electrode and including a plurality of microlenses, wherein
the light-shielding layer is electrically connected to the transparent electrode through the first opening and is at least a part of a path electrically connecting the transparent electrode and the control electrode, and
at least a part of the plurality of pixel electrodes, at least a part of the light-shielding conductive layer and at least a part of the plurality of microlenses overlap in a plan view.