US 12,249,672 B2
Method for manufacturing a semiconductor device and optoelectronic device
Philipp Kreuter, Teublitz (DE); Andreas Biebersdorf, Regensburg (DE); Christoph Klemp, Regensburg (DE); Jens Ebbecke, Rohr in Niederbayern OT Helchenbach (DE); Ines Pietzonka, Donaustauf (DE); and Petrus Sundgren, Lappersdorf (DE)
Assigned to OSRAM Opto Semiconductors GmbH, Regensburg (DE)
Appl. No. 17/614,269
Filed by OSRAM Opto Semiconductors GmbH, Regensburg (DE)
PCT Filed May 19, 2020, PCT No. PCT/EP2020/063903
§ 371(c)(1), (2) Date Nov. 24, 2021,
PCT Pub. No. WO2020/239524, PCT Pub. Date Dec. 3, 2020.
Claims priority of application No. 19177113 (EP), filed on May 28, 2019.
Prior Publication US 2022/0254957 A1, Aug. 11, 2022
Int. Cl. H01L 33/30 (2010.01); H01L 33/00 (2010.01); H01L 33/02 (2010.01)
CPC H01L 33/305 (2013.01) [H01L 33/0062 (2013.01); H01L 33/025 (2013.01)] 13 Claims
OG exemplary drawing
 
1. A method for manufacturing a semiconductor device, the method comprising:
providing a growth substrate;
depositing an n-doped first layer;
depositing an active region on the n-doped first layer;
depositing a p-doped second layer on the active region, wherein a p-doped material comprises magnesium (Mg); and
depositing zinc (Zn) on a surface of the p-doped second layer such that Zn partly or fully replaces Mg atoms in the second layer and such that a concentration of Zn in the second layer decreases from a first value to a second value in a first area of the second layer adjacent to the active region, the first area being in a range of 5 nm to 200 nm.