| CPC H01L 33/0075 (2013.01) [H01L 33/007 (2013.01); H01L 33/12 (2013.01); H01L 33/44 (2013.01); H01L 25/0753 (2013.01); H01L 33/0093 (2020.05); H01L 33/06 (2013.01); H01L 33/20 (2013.01); H01L 2933/0025 (2013.01)] | 10 Claims |
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1. A substrate structure comprising:
a substrate;
a buffer layer disposed on the substrate;
a porous semiconductor layer disposed on the buffer layer, the porous semiconductor layer having a plurality of voids;
a plurality of semiconductor light emitting structures disposed on the porous semiconductor layer, the plurality of semiconductor light emitting structures having a nanorod shape and extending vertically;
a planarization layer disposed between the porous semiconductor layer and the plurality of semiconductor light emitting structures; and
a passivation film disposed on entire sidewalls of each of the plurality of semiconductor light emitting structures, the passivation film having an insulation property,
wherein lower portions of the plurality of semiconductor light emitting structures extend horizontally along an upper surface of the planarization layer such that lower portions of the plurality of semiconductor light emitting structures are connected to each other.
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