US 12,249,670 B2
High efficient micro devices
Gholamreza Chaji, Waterloo (CA); Ehsanollah Fathi, Waterloo (CA); and Hossein Zamani Siboni, Waterloo (CA)
Assigned to VueReal Inc., Waterloo (CA)
Filed by VueReal Inc., Waterloo (CA)
Filed on Jul. 21, 2023, as Appl. No. 18/356,942.
Application 18/356,942 is a continuation of application No. 17/851,622, filed on Jun. 28, 2022, granted, now 11,721,784.
Application 17/851,622 is a continuation of application No. 16/428,103, filed on May 31, 2019, granted, now 11,600,743, issued on Mar. 7, 2023.
Application 16/428,103 is a continuation in part of application No. 15/942,154, filed on Mar. 30, 2018, abandoned.
Claims priority of provisional application 62/684,677, filed on Jun. 13, 2018.
Claims priority of provisional application 62/682,479, filed on Jun. 8, 2018.
Claims priority of provisional application 62/533,394, filed on Jul. 17, 2017.
Claims priority of provisional application 62/479,038, filed on Mar. 30, 2017.
Prior Publication US 2023/0361239 A1, Nov. 9, 2023
Int. Cl. H01L 29/423 (2006.01); H01L 25/16 (2023.01); H01L 29/40 (2006.01); H01L 33/00 (2010.01); H01L 27/15 (2006.01); H01L 33/20 (2010.01); H01L 33/44 (2010.01)
CPC H01L 33/0041 (2013.01) [H01L 25/167 (2013.01); H01L 29/401 (2013.01); H01L 29/42312 (2013.01); H01L 33/0037 (2013.01); H01L 27/156 (2013.01); H01L 33/007 (2013.01); H01L 33/0093 (2020.05); H01L 33/20 (2013.01); H01L 33/44 (2013.01); H01L 2933/0066 (2013.01)] 24 Claims
OG exemplary drawing
 
1. A method of manipulating electric field in a micro device for manipulating vertical current flow, the method comprising:
providing a structure having a floating gate that is charged with different methods to bias a metal-insulator-semiconductor (MIS) structure;
providing a biasing control gate that is isolated with a dielectric layer from the floating gate;
storing charges in the floating gate using the biasing control gate; and
biasing the micro device through functional electrodes to have current flow vertically limiting lateral current.