US 12,249,662 B2
Semiconductor device, manufacturing method thereof, and detecting method using the same
Ya-Chin King, Taipei (TW); Chrong Jung Lin, Hsinchu (TW); Burn Jeng Lin, Hsinchu (TW); and Shi-Jiun Wang, Changhua (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW); and NATIONAL TSING HUA UNIVERSITY, Hsinchu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW); and NATIONAL TSING HUA UNIVERSITY, Hsinchu (TW)
Filed on May 20, 2022, as Appl. No. 17/749,382.
Prior Publication US 2023/0378377 A1, Nov. 23, 2023
Int. Cl. H01L 31/02 (2006.01); H01J 37/244 (2006.01); H01L 31/18 (2006.01)
CPC H01L 31/02005 (2013.01) [H01J 37/244 (2013.01); H01L 31/186 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A device comprising:
a detector;
a sensing pad electrically connected to the detector;
a ring structure over the sensing pad, wherein the ring structure comprises:
an upper conductive ring; and
a lower conductive ring between the upper conductive ring and the sensing pad;
a control circuit;
a first transistor interconnecting the upper conductive ring and the control circuit; and
a second transistor interconnecting the lower conductive ring and the control circuit.