US 12,249,655 B2
Method for manufacturing thin film transistor, and electronic device
SeungJin Kim, Paju-si (KR); HeeSung Lee, Incheon (KR); Sohyung Lee, Goyang-si (KR); MinCheol Kim, Paju-si (KR); JeongSuk Yang, Goyang-si (KR); JeeHo Park, Seoul (KR); and Seoyeon Im, Paju-si (KR)
Assigned to LG Display Co., Ltd., Seoul (KR)
Filed by LG Display Co., Ltd., Seoul (KR)
Filed on Sep. 12, 2023, as Appl. No. 18/465,703.
Application 17/154,852 is a division of application No. 15/994,756, filed on May 31, 2018, granted, now 10,930,790, issued on Feb. 23, 2021.
Application 18/465,703 is a continuation of application No. 17/859,946, filed on Jul. 7, 2022, granted, now 11,791,418.
Application 17/859,946 is a continuation of application No. 17/154,852, filed on Jan. 21, 2021, granted, now 11,417,774, issued on Aug. 16, 2022.
Claims priority of application No. 10-2017-0068037 (KR), filed on May 31, 2017; and application No. 10-2017-0169420 (KR), filed on Dec. 11, 2017.
Prior Publication US 2023/0420572 A1, Dec. 28, 2023
Int. Cl. H01L 29/786 (2006.01); G09G 3/3266 (2016.01); G09G 3/3291 (2016.01); H01L 27/12 (2006.01); H01L 29/24 (2006.01); H01L 29/417 (2006.01); H01L 29/66 (2006.01)
CPC H01L 29/7869 (2013.01) [G09G 3/3266 (2013.01); H01L 27/1225 (2013.01); H01L 29/24 (2013.01); H01L 29/41733 (2013.01); H01L 29/66969 (2013.01); H01L 29/78696 (2013.01); G09G 3/3291 (2013.01); G09G 2300/0426 (2013.01); G09G 2300/0819 (2013.01); G09G 2300/0842 (2013.01); G09G 2310/0245 (2013.01); G09G 2310/08 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method of manufacturing a thin film transistor comprising:
forming a gate electrode on a substrate;
depositing a gate dielectric layer on the gate electrode;
forming a first oxide semiconductor layer including indium (In), gallium (Ga), zinc (Zn), tin (Sn), and oxygen (O); and
forming a second oxide semiconductor layer including indium (In), gallium (Ga), zinc (Zn), and oxygen (O),
wherein a content ratio Ga/Zn of the second oxide semiconductor layer is higher than a content ratio Ga/Zn of the first oxide semiconductor layer,
wherein in the first oxide semiconductor layer, a content ratio of In to Sn satisfies 2.5≤In/Sn≤5, a content ratio of Ga to Sn satisfies 1≤Ga/Sn≤2, and a content ratio of Zn to Sn satisfies 2.5≤Zn/Sn≤5, and
wherein the content ratio of Ga/Zn of the first oxide semiconductor layer is less than 1 and the content ratio of Ga/Zn of the second oxide semiconductor layer is less than 1.