US 12,249,653 B2
Semiconductor device
Shunpei Yamazaki, Tokyo (JP)
Assigned to Semiconductor Energy Laboratory Co., Ltd., Atsugi (JP)
Filed by Semiconductor Energy Laboratory Co., Ltd., Atsugi (JP)
Filed on Aug. 5, 2022, as Appl. No. 17/881,676.
Application 17/881,676 is a continuation of application No. 16/831,934, filed on Mar. 27, 2020, granted, now 11,411,121.
Application 16/831,934 is a continuation of application No. 15/844,676, filed on Dec. 18, 2017, granted, now 10,608,116, issued on Mar. 31, 2020.
Application 15/844,676 is a continuation of application No. 15/096,350, filed on Apr. 12, 2016, abandoned.
Application 15/096,350 is a continuation of application No. 13/955,151, filed on Jul. 31, 2013, granted, now 9,318,613, issued on Apr. 19, 2016.
Application 13/955,151 is a continuation of application No. 13/074,582, filed on Mar. 29, 2011, granted, now 8,502,221, issued on Aug. 6, 2013.
Claims priority of application No. 2010-086407 (JP), filed on Apr. 2, 2010.
Prior Publication US 2023/0021382 A1, Jan. 26, 2023
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 29/786 (2006.01); H01L 27/12 (2006.01)
CPC H01L 29/7869 (2013.01) [H01L 27/1222 (2013.01); H01L 27/1225 (2013.01); H01L 29/786 (2013.01); H01L 29/78606 (2013.01); H01L 29/78693 (2013.01)] 8 Claims
OG exemplary drawing
 
1. A semiconductor device comprising:
a first transistor in a pixel portion; and
a second transistor in a driver portion,
wherein the first transistor comprises:
a first oxide film over an insulating film;
a first oxide semiconductor film over and in contact with the first oxide film;
a second oxide film over the first oxide semiconductor film;
a first source electrode and a first drain electrode electrically connected to the first oxide semiconductor film; and
a first gate electrode over the first oxide semiconductor film,
wherein the second transistor comprises:
a third oxide film over the insulating film;
a second oxide semiconductor film over and in contact with the third oxide film;
a fourth oxide film over the second oxide semiconductor film;
a second source electrode and a second drain electrode electrically connected to the second oxide semiconductor film; and
a second gate electrode over the second oxide semiconductor film,
wherein each of the second oxide film and the fourth oxide film is an island-shaped,
wherein the first oxide semiconductor film is in contact with a side surface and a top surface of each of the first source electrode and the first drain electrode, and
wherein the second oxide semiconductor film is in contact with a side surface and a top surface of each of the second source electrode and the second drain electrode.