US 12,249,652 B2
Oxide semiconductor thin-film transistor and method of manufacturing oxide semiconductor thin-film transistor
Kazushige Takechi, Kanagawa (JP)
Assigned to Wuhan Tianma Micro-Electronics Co., Ltd., Wuhnan (CN)
Filed by Wuhan Tianma Micro-Electronics Co., Ltd., Wuhan (CN)
Filed on Nov. 8, 2021, as Appl. No. 17/521,217.
Claims priority of application No. 2020-188269 (JP), filed on Nov. 11, 2020.
Prior Publication US 2022/0149207 A1, May 12, 2022
Int. Cl. H01L 29/786 (2006.01); H01L 21/02 (2006.01); H01L 27/12 (2006.01); H01L 29/66 (2006.01); H10K 59/121 (2023.01)
CPC H01L 29/78618 (2013.01) [H01L 21/02565 (2013.01); H01L 27/1225 (2013.01); H01L 27/1251 (2013.01); H01L 27/1255 (2013.01); H01L 27/127 (2013.01); H01L 29/66969 (2013.01); H01L 29/78675 (2013.01); H01L 29/7869 (2013.01); H10K 59/1213 (2023.02); H10K 59/1216 (2023.02)] 6 Claims
OG exemplary drawing
 
1. An oxide semiconductor thin-film transistor comprising:
an oxide semiconductor part including a channel region and a first and a second source/drain regions sandwiching the channel region;
a gate electrode part;
an insulator part located between the gate electrode part and the oxide semiconductor part, the insulator part being made of a metal compound having a relative permittivity of not less than 8;
a first source/drain electrode part;
a second source/drain electrode part;
a first compound interfacial part covering an entire top surface of the first source/drain region and having an interface with the first source/drain electrode part and another interface with the first source/drain region, the first compound interfacial part containing a constituent element of the oxide semiconductor part and a constituent metal element of the insulator part; and
a second compound interfacial part covering an entire top surface of the second source/drain region and having an interface with the second source/drain electrode part and another interface with the second source/drain region, the second compound interfacial part containing a constituent element of the oxide semiconductor part and a constituent metal element of the insulator part.