US 12,249,651 B2
Semiconductor device
Hyuncheol Kim, Seoul (KR); Yongseok Kim, Suwon-si (KR); Dongsoo Woo, Seoul (KR); and Kyunghwan Lee, Seoul (KR)
Assigned to SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed by Samsung Electronics Co., Ltd., Suwon-si (KR)
Filed on May 10, 2022, as Appl. No. 17/741,219.
Claims priority of application No. 10-2021-0120539 (KR), filed on Sep. 9, 2021.
Prior Publication US 2023/0075559 A1, Mar. 9, 2023
Int. Cl. H01L 29/78 (2006.01); H01L 29/10 (2006.01); H01L 29/417 (2006.01)
CPC H01L 29/7851 (2013.01) [H01L 29/1033 (2013.01); H01L 29/41791 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device comprising:
a channel;
a gate structure on the channel;
a first source/drain at a first end of the channel, the first source/drain comprising a metal;
a first tunable band-gap layer between the channel and the first source/drain, the first tunable band-gap layer having a band gap that varies according to stress;
a first electrostrictive layer between the gate structure and the first tunable band-gap layer, the first electrostrictive layer having a property of being deformed based on and upon application of an electric field; and
a second source/drain at a second end of the channel.