US 12,249,650 B2
FinFET device and methods of forming the same
Shahaji B. More, Hsinchu (TW); Cheng-Han Lee, New Taipei (TW); and Shih-Chieh Chang, Taipei (TW)
Assigned to Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed on Mar. 17, 2023, as Appl. No. 18/185,602.
Application 17/121,186 is a division of application No. 16/177,072, filed on Oct. 31, 2018, granted, now 10,868,183, issued on Dec. 15, 2020.
Application 18/185,602 is a continuation of application No. 17/121,186, filed on Dec. 14, 2020, granted, now 11,626,518.
Prior Publication US 2023/0223477 A1, Jul. 13, 2023
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 29/08 (2006.01); H01L 21/225 (2006.01); H01L 21/768 (2006.01); H01L 21/8238 (2006.01); H01L 27/092 (2006.01); H01L 29/10 (2006.01); H01L 29/161 (2006.01); H01L 29/423 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01)
CPC H01L 29/785 (2013.01) [H01L 21/2251 (2013.01); H01L 21/76829 (2013.01); H01L 21/823821 (2013.01); H01L 27/0924 (2013.01); H01L 29/0847 (2013.01); H01L 29/1033 (2013.01); H01L 29/161 (2013.01); H01L 29/42356 (2013.01); H01L 29/66545 (2013.01); H01L 29/66795 (2013.01); H01L 29/7851 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device comprising:
a substrate;
a fin protruding above the substrate, the fin comprising a semiconductor material and a first dopant, wherein a concentration of the first dopant in the fin changes along a first direction from an upper surface of the fin toward the substrate;
a gate structure over a channel region in the fin; and
source/drain regions on opposing sides of the gate structure, the source/drain regions comprising a second dopant that diffuses into the channel region, wherein a concentration of the second dopant changes along the first direction, wherein the concentration of the second dopant at a first location within the channel region is higher than that at a second location within the channel region, wherein the concentration of the first dopant at the first location is lower than that at the second location.