US 12,249,645 B2
Laterally diffused metal oxide semiconductor device and manufacturing method therefor
Zhili Zhang, Jiangsu (CN); Jingchuan Zhao, Jiangsu (CN); and Sen Zhang, Jiangsu (CN)
Assigned to CSMC TECHNOLOGIES FAB2 CO., LTD., Jiangsu (CN)
Appl. No. 17/620,952
Filed by CSMC TECHNOLOGIES FAB2 CO., LTD., Jiangsu (CN)
PCT Filed May 26, 2020, PCT No. PCT/CN2020/092270
§ 371(c)(1), (2) Date Dec. 20, 2021,
PCT Pub. No. WO2021/051856, PCT Pub. Date Mar. 25, 2021.
Claims priority of application No. 201910874283.5 (CN), filed on Sep. 17, 2019.
Prior Publication US 2022/0336657 A1, Oct. 20, 2022
Int. Cl. H01L 29/78 (2006.01); H01L 29/10 (2006.01); H01L 29/40 (2006.01); H01L 29/66 (2006.01)
CPC H01L 29/7816 (2013.01) [H01L 29/1095 (2013.01); H01L 29/408 (2013.01); H01L 29/66681 (2013.01)] 14 Claims
OG exemplary drawing
 
1. A laterally diffused metal-oxide-semiconductor (LDMOS) device, comprising:
a substrate of a second conductivity type;
a drift region provided on the substrate and having a first conductivity type, the first conductivity type and the second conductivity type being opposite to each other;
a plurality of buried layers of the second conductivity type with different depths disposed in the drift region; and
a buried layer implantation auxiliary structure disposed on the plurality of buried layers of the second conductivity type and comprising a sinking structure, the sinking structure including at least one of an implanting groove and an implanting hole, the buried layer implantation auxiliary structure further comprising an electrical property modification material filled in the sinking structure, the electrical property modification material differing from a material of the drift region.