US 12,249,640 B2
Conformal transfer doping method for Fin-like field effect transistor
Sai-Hooi Yeong, Hsinchu County (TW); Sheng-Chen Wang, Hsinchu County (TW); Bo-Yu Lai, Taipei (TW); Ziwei Fang, Hsinchu (TW); Feng-Cheng Yang, Hsinchu County (TW); and Yen-Ming Chen, Hsin-Chu County (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed on Nov. 30, 2023, as Appl. No. 18/524,417.
Application 17/121,007 is a division of application No. 16/396,961, filed on Apr. 29, 2019, granted, now 10,868,151, issued on Dec. 15, 2020.
Application 18/524,417 is a continuation of application No. 17/815,857, filed on Jul. 28, 2022, granted, now 11,862,713.
Application 17/815,857 is a continuation of application No. 17/121,007, filed on Dec. 14, 2020, granted, now 11,476,352, issued on Oct. 18, 2022.
Application 16/396,961 is a continuation of application No. 15/653,720, filed on Jul. 19, 2017, granted, now 10,276,691, issued on Apr. 30, 2019.
Claims priority of provisional application 62/434,694, filed on Dec. 15, 2016.
Prior Publication US 2024/0097010 A1, Mar. 21, 2024
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 29/78 (2006.01); H01L 21/225 (2006.01); H01L 21/265 (2006.01); H01L 29/165 (2006.01); H01L 29/66 (2006.01)
CPC H01L 29/66803 (2013.01) [H01L 21/225 (2013.01); H01L 21/26526 (2013.01); H01L 29/165 (2013.01); H01L 29/66818 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A device comprising:
a fin structure disposed over a substrate, the fin structure having a source/drain region and a channel region, the source/drain region of the fin structure including:
a first portion formed of a first semiconductor material;
a second portion formed of the first semiconductor material, the second portion of the fin structure positioned over and around the first portion of the fin structure; and
a silicon-containing layer disposed over and around the second portion of the fin structure, the silicon-containing layer formed of a second semiconductor material that is different than the first semiconductor material, wherein the second portion of the fin structure and the silicon-containing layer both include a dopant at a first concentration that is substantially uniform at any point of the second portion and the silicon-containing layer of the fin structure, wherein the first concentration of the dopant is considered substantially uniform when doping concentrations at any defined number of points of the second portion and the silicon-containing layer are within ±5% of each other;
a gate dielectric layer disposed over the channel region of the fin structure; and
a gate electrode disposed over the gate dielectric layer.