US 12,249,631 B2
Gallium nitride device for high frequency and high power applications
Puneet Srivastava, Wilmington, MA (US); and James G. Fiorenza, Carlisle, MA (US)
Assigned to Analog Devices, Inc., Wilmington, MA (US)
Filed by Analog Devices, Inc., Wilmington, MA (US)
Filed on Jun. 7, 2023, as Appl. No. 18/206,974.
Application 18/047,914 is a division of application No. 15/975,917, filed on May 10, 2018, granted, now 11,508,821.
Application 18/206,974 is a continuation of application No. 18/047,914, filed on Oct. 19, 2022, granted, now 12,009,207.
Claims priority of provisional application 62/505,586, filed on May 12, 2017.
Prior Publication US 2023/0317801 A1, Oct. 5, 2023
Int. Cl. H01L 29/40 (2006.01); H01L 21/02 (2006.01); H01L 29/20 (2006.01); H01L 29/205 (2006.01); H01L 29/66 (2006.01); H01L 29/778 (2006.01)
CPC H01L 29/404 (2013.01) [H01L 21/0254 (2013.01); H01L 29/205 (2013.01); H01L 29/407 (2013.01); H01L 29/66462 (2013.01); H01L 29/778 (2013.01); H01L 29/7786 (2013.01); H01L 29/2003 (2013.01)] 19 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a layer of a first semiconducting material, the first semiconducting material comprising a first crystal structure;
a layer of a second semiconducting material disposed adjacent to the layer of the first semiconducting material to form a heterojunction with the layer of the first semiconducting material;
a substrate directly bonded to the layer of the first semiconducting material without an intervening buffer layer material, the substrate comprising a second crystal structure, wherein the substrate has a thermal conductivity greater than that of the first semiconducting material;
a gate electrode;
a drain electrode; and
a backside field plate that is electrically coupled to the heterojunction, wherein the backside field plate includes a side in direct contact with the substrate, and wherein the backside field plate does not include a semiconductor material.