US 12,249,630 B2
Method for manufacturing a grid
Adolf Schoner, Hässelby (SE); Sergey Reshanov, Upplands-Väsby (SE); Nicolas Thierry-Jebali, Stockholm (SE); and Hossein Elahipanah, Sollentuna (SE)
Assigned to II-VI DELAWARE, INC., Wilmington, DE (US)
Filed by II-VI Delaware, Inc., Wilmington, DE (US)
Filed on Dec. 1, 2023, as Appl. No. 18/526,516.
Application 18/526,516 is a continuation of application No. 17/660,888, filed on Apr. 27, 2022, granted, now 11,876,116.
Application 17/660,888 is a continuation of application No. 16/647,094, granted, now 11,342,423, issued on May 24, 2022, previously published as PCT/EP2018/074908, filed on Sep. 14, 2018.
Claims priority of application No. 17511387 (SE), filed on Sep. 15, 2017.
Prior Publication US 2024/0105783 A1, Mar. 28, 2024
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 21/00 (2006.01); H01L 21/02 (2006.01); H01L 21/04 (2006.01); H01L 21/265 (2006.01); H01L 21/285 (2006.01); H01L 21/306 (2006.01); H01L 21/3065 (2006.01); H01L 21/324 (2006.01); H01L 29/40 (2006.01)
CPC H01L 29/402 (2013.01) [H01L 21/02529 (2013.01); H01L 21/02634 (2013.01); H01L 21/046 (2013.01); H01L 21/26513 (2013.01); H01L 21/28537 (2013.01); H01L 21/30625 (2013.01); H01L 21/3065 (2013.01); H01L 21/324 (2013.01); H01L 29/401 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method for the manufacture of a grid structure in a silicon carbide (SiC) semiconductor material, the method comprising:
providing a substrate comprising a doped semiconductor SiC material, the substrate comprising a first layer of a first conductivity type;
epitaxial growth growing at least one doped semiconductor SiC material of a second conductivity type opposite to the first conductivity type on the first layer;
removing parts of the epitaxial growth grown semiconductor SiC material to form separated second regions; and
implanting ions in the first layer to form first regions of a second conductivity type opposite to the first conductivity type such that each of the separated second regions is in contact with one of the first regions,
wherein the first regions have a lower doping concentration than the separated second regions.