US 12,249,628 B2
Method of forming p-type nitride semiconductor layer
Katsuhiro Kishimoto, Kyoto (JP); Mitsuru Funato, Kyoto (JP); Yoichi Kawakami, Kyoto (JP); and Kunimichi Omae, Anan (JP)
Assigned to KYOTO UNIVERSITY, Kyoto (JP); and NICHIA CORPORATION, Anan (JP)
Filed by Kyoto University, Kyoto (JP); and Nichia Corporation, Anan (JP)
Filed on Jun. 5, 2023, as Appl. No. 18/329,191.
Application 18/329,191 is a division of application No. 16/674,824, filed on Nov. 5, 2019, abandoned.
Claims priority of application No. 2018-210033 (JP), filed on Nov. 7, 2018.
Prior Publication US 2023/0326976 A1, Oct. 12, 2023
Int. Cl. H01L 21/02 (2006.01); H01L 29/20 (2006.01); H01L 29/78 (2006.01); H01L 33/00 (2010.01); H01L 33/32 (2010.01)
CPC H01L 29/2003 (2013.01) [H01L 21/0254 (2013.01); H01L 21/0262 (2013.01); H01L 29/78 (2013.01); H01L 33/007 (2013.01); H01L 33/0075 (2013.01); H01L 33/32 (2013.01)] 6 Claims
OG exemplary drawing
 
1. A method of forming a p-type nitride semiconductor layer comprising:
preparing a base; and
providing the p-type nitride semiconductor layer on or above the base by forming an Al-containing nitride semiconductor layer on or above the base and then
forming an Al-containing compound layer that consists essentially of Al and C as main constituent elements on a surface of the Al-containing nitride semiconductor layer by supplying a source gas including a source gas of Al and a source gas of C.