US 12,249,621 B2
Semiconductor structure with dielectric fin feature
Guan-Lin Chen, Baoshan Township, Hsinchu County (TW); Jung-Chien Cheng, Tainan (TW); Kuo-Cheng Chiang, Zhubei (TW); Shi-Ning Ju, Hsinchu (TW); and Chih-Hao Wang, Baoshan Township, Hsinchu County (TW)
Assigned to Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed on Feb. 23, 2022, as Appl. No. 17/678,875.
Claims priority of provisional application 63/276,819, filed on Nov. 8, 2021.
Prior Publication US 2023/0141523 A1, May 11, 2023
Int. Cl. H01L 29/06 (2006.01); H01L 21/8234 (2006.01); H01L 29/423 (2006.01); H01L 29/786 (2006.01)
CPC H01L 29/0665 (2013.01) [H01L 21/823412 (2013.01); H01L 21/823481 (2013.01); H01L 29/0649 (2013.01); H01L 29/42392 (2013.01); H01L 29/78696 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor structure, comprising:
a substrate;
first channel structures and second channel structures formed over the substrate;
a dielectric fin structure formed between the first channel structures and the second channel structures, wherein the dielectric fin structure comprises a core portion and first connecting portions connected to the core portion; and
a gate structure comprising a first portion, wherein the first portion of the gate structure is formed around the first channel structures and covers the first connecting portions of the dielectric fin structure.