US 12,249,620 B2
Power semiconductor device and method for fabricating the same
Jong Seok Lee, Suwon-si (KR); Tae Ho Jeong, Yongin-si (KR); and Kyoung Kook Hong, Hwaseong-si (KR)
Assigned to HYUNDAI MOTOR COMPANY, Seoul (KR); and KIA CORPORATION, Seoul (KR)
Filed by HYUNDAI MOTOR COMPANY, Seoul (KR); and KIA CORPORATION, Seoul (KR)
Filed on Mar. 29, 2022, as Appl. No. 17/707,706.
Claims priority of application No. 10-2021-0115073 (KR), filed on Aug. 30, 2021.
Prior Publication US 2023/0061126 A1, Mar. 2, 2023
Int. Cl. H01L 29/06 (2006.01); H01L 21/8234 (2006.01); H01L 29/423 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01)
CPC H01L 29/0607 (2013.01) [H01L 21/823412 (2013.01); H01L 29/0696 (2013.01); H01L 29/4236 (2013.01); H01L 29/4238 (2013.01); H01L 29/66734 (2013.01); H01L 29/7813 (2013.01)] 16 Claims
OG exemplary drawing
 
1. A power semiconductor device comprising:
a semiconductor layer;
a well region positioned inside the semiconductor layer and having a first conductive type;
a source region positioned on the well region and having a second conductive type;
a gate region making contact with a side surface of the well region to surround the well region; and
a drift region making contact with bottom surfaces of the well region and the gate region and having the second conductive type,
wherein the drift region includes a protrusion region extending from the drift region and making contact with another side surface of the well region, and
wherein the gate region makes contact with the well region on at least three surfaces.