CPC H01L 29/0607 (2013.01) [H01L 21/823412 (2013.01); H01L 29/0696 (2013.01); H01L 29/4236 (2013.01); H01L 29/4238 (2013.01); H01L 29/66734 (2013.01); H01L 29/7813 (2013.01)] | 16 Claims |
1. A power semiconductor device comprising:
a semiconductor layer;
a well region positioned inside the semiconductor layer and having a first conductive type;
a source region positioned on the well region and having a second conductive type;
a gate region making contact with a side surface of the well region to surround the well region; and
a drift region making contact with bottom surfaces of the well region and the gate region and having the second conductive type,
wherein the drift region includes a protrusion region extending from the drift region and making contact with another side surface of the well region, and
wherein the gate region makes contact with the well region on at least three surfaces.
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