US 12,249,616 B2
Photoelectric conversion apparatus, photoelectric conversion system, and movable body
Junji Iwata, Tokyo (JP); Kazuhiro Morimoto, Kanagawa (JP); Yu Maehashi, Hokkaido (JP); and Yoshiyuki Hayashi, Tokyo (JP)
Assigned to Canon Kabushiki Kaisha, Tokyo (JP)
Filed by CANON KABUSHIKI KAISHA, Tokyo (JP)
Filed on Jul. 2, 2024, as Appl. No. 18/762,207.
Application 18/762,207 is a continuation of application No. PCT/JP2022/000055, filed on Jan. 5, 2022.
Prior Publication US 2024/0355856 A1, Oct. 24, 2024
Int. Cl. H01L 27/146 (2006.01); H04N 25/705 (2023.01); H04N 25/76 (2023.01)
CPC H01L 27/14634 (2013.01) [H01L 27/14636 (2013.01); H04N 25/705 (2023.01); H04N 25/7795 (2023.01)] 20 Claims
OG exemplary drawing
 
1. A photoelectric conversion apparatus comprising:
a first substrate including a first semiconductor layer including a plurality of photoelectric conversion units and a first wiring structure;
a second substrate including a second semiconductor layer including a plurality of pixel circuits disposed to respectively correspond to the plurality of photoelectric conversion units, and a second wiring structure; and
a third substrate including a third semiconductor layer including a signal processing circuit configured to process output signals from the plurality of pixel circuits, and a third wiring structure;
wherein the plurality of photoelectric conversion units each includes an avalanche photodiode,
wherein the first substrate and the second substrate are stacked in such a manner that the first wiring structure and the second wiring structure are disposed between the first semiconductor layer and the second semiconductor layer,
wherein the second substrate and the third substrate are stacked in such a manner that the third wiring structure is disposed between the second semiconductor layer and the third semiconductor layer, and
wherein a first through wire penetrating through the third semiconductor layer and a semiconductor element overlapping the first through wire in a planar view are disposed.