US 12,249,615 B2
Image sensor with a device isolation structure enclosing a plurality of pixels including an opening in plan view
Younggu Jin, Suwon-si (KR); Youngchan Kim, Suwon-si (KR); and Yonghun Kwon, Suwon-si (KR)
Assigned to SAMSUNG ELECTRONICS CO., LTD., Suwon-si Gyeonggi-do (KR)
Filed by SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed on May 19, 2023, as Appl. No. 18/199,601.
Claims priority of application No. 10-2022-0064248 (KR), filed on May 25, 2022.
Prior Publication US 2023/0411423 A1, Dec. 21, 2023
Int. Cl. H01L 27/146 (2006.01)
CPC H01L 27/1463 (2013.01) [H01L 27/146 (2013.01); H01L 27/14603 (2013.01); H01L 27/14609 (2013.01); H01L 27/14612 (2013.01); H01L 27/14614 (2013.01); H01L 27/14627 (2013.01); H01L 27/14645 (2013.01); H01L 27/14654 (2013.01); H01L 27/14656 (2013.01)] 20 Claims
OG exemplary drawing
 
1. An image sensor, comprising:
a substrate including a plurality of unit pixels;
a photoelectric device portion and a storage device portion in each of the plurality of unit pixels, the photoelectric device portion and the storage device portion being within the substrate;
a device isolation structure in the substrate and partitioning the plurality of unit pixels from each other, the device isolation structure, when viewed in a plan view, including a first portion enclosing a region where the photoelectric device portion and the storage device portion are disposed and a second portion connected to the first portion and disposed at a boundary between the photoelectric device portion and the storage device portion, wherein the second portion being is partially open at a the boundary between the photoelectric device portion and the storage device portion; and
an overflow gate between the photoelectric device portion and the storage device portion, the overflow gate providing an overflow path between the photoelectric device portion and the storage device portion according to a certain voltage.