| CPC H01L 27/14603 (2013.01) [H01L 27/14621 (2013.01); H01L 27/14627 (2013.01); H01L 27/1463 (2013.01); H01L 27/14636 (2013.01); H01L 27/1464 (2013.01); H01L 27/14645 (2013.01); H01L 27/14689 (2013.01); H04N 25/53 (2023.01); H04N 25/77 (2023.01)] | 18 Claims |
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1. An image sensor comprising:
a semiconductor substrate having a first surface and a second surface;
transistors disposed on the first surface of the semiconductor substrate;
first and second lower pad electrodes spaced apart from each other on a first interlayer insulating film, the first interlayer insulating film covering the transistors;
a mold insulating layer disposed on the first and second lower pad electrodes;
a first lower electrode formed inside a first opening, the first opening passing through the mold insulating layer, and the first lower electrode being on the first lower pad electrode;
a second lower electrode formed inside a second opening, the second opening passing through the mold insulating layer, and the second lower electrode being on the second lower pad electrode;
a first wiring layer located at a vertical level lower than that of the first and second lower pad electrodes;
a second wiring layer located at a vertical level higher than that of the first and second lower pad electrodes;
a dielectric film and an upper electrode disposed on the first lower electrode and the second lower electrode;
a first contact plug passing through the mold insulating layer, the first contact plug being connected to a top surface of the first lower pad electrode; and
a second contact plug passing through the mold insulating layer, the second contact plug being connected to a top surface of the second lower pad electrode,
wherein the second lower pad electrode is not directly connected to the first wiring layer through the second contact plug or any other contact plug, and
the second lower pad electrode is directly connected to the second wiring layer through the second contact plug.
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