US 12,249,609 B2
Thin film transistor and display device comprising the same
JuHeyuck Baeck, Paju-si (KR)
Assigned to LG Display Co., Ltd., Seoul (KR)
Filed by LG Display Co., Ltd., Seoul (KR)
Filed on Oct. 31, 2022, as Appl. No. 17/977,669.
Claims priority of application No. 10-2021-0176922 (KR), filed on Dec. 10, 2021.
Prior Publication US 2023/0187452 A1, Jun. 15, 2023
Int. Cl. H01L 27/12 (2006.01); G02F 1/1368 (2006.01); H10K 59/121 (2023.01)
CPC H01L 27/1225 (2013.01) [G02F 1/1368 (2013.01); H10K 59/1213 (2023.02)] 20 Claims
OG exemplary drawing
 
1. A display device comprising:
a substrate; and
a plurality of thin film transistors on the substrate,
wherein each of the plurality of thin film transistors includes an active layer having a channel portion and a gate electrode spaced apart from the active layer,
the substrate includes a first area,
the gate electrode of a thin film transistor among the plurality of thin film transistors disposed in the first area includes:
a first part that at least partially overlaps the channel portion of the active layer; and
a second part having a thickness smaller than that of the first part and at least partially overlapping the channel portion of the active layer,
wherein light transmittance of the second part is greater than light transmittance of the first part, and
wherein, based on a plan view, a ratio of an area occupied by the second part to a total area where the channel portion and the gate electrode overlap each other is in a range from 10% to 60%.