US 12,249,595 B2
Semiconductor light emitting device and method for manufacturing the same
Soo Kun Jeon, Gyeonggi-do (KR); and Geun Mo Jin, Gyeonggi-do (KR)
Assigned to Lumens Co., Ltd., Yongin-si (KR)
Appl. No. 17/773,899
Filed by Lumens Co., Ltd., Yongin-si (KR)
PCT Filed Oct. 14, 2020, PCT No. PCT/KR2020/013994
§ 371(c)(1), (2) Date May 3, 2022,
PCT Pub. No. WO2021/125524, PCT Pub. Date Jun. 24, 2021.
Claims priority of application No. 10-2019-0170642 (KR), filed on Dec. 19, 2019.
Prior Publication US 2022/0384397 A1, Dec. 1, 2022
Int. Cl. H01L 25/075 (2006.01); H01L 33/00 (2010.01); H01L 33/42 (2010.01); H01L 33/50 (2010.01); H01L 33/52 (2010.01); H01L 33/58 (2010.01); H01L 33/62 (2010.01)
CPC H01L 25/0753 (2013.01) [H01L 33/0093 (2020.05); H01L 33/42 (2013.01); H01L 33/50 (2013.01); H01L 33/52 (2013.01); H01L 33/58 (2013.01); H01L 33/62 (2013.01); H01L 2933/0016 (2013.01); H01L 2933/0041 (2013.01); H01L 2933/005 (2013.01); H01L 2933/0058 (2013.01); H01L 2933/0066 (2013.01)] 14 Claims
OG exemplary drawing
 
1. A semiconductor light emitting device comprising:
two or more light emitting units, each including a first semiconductor layer having a first conductivity, an active layer for generating light by electron-hole recombination, and a second semiconductor layer having a second conductivity different from the first conductivity, with the first semiconductor layer, the active layer and the second semiconductor layer being sequentially formed on a growth substrate;
an electrode unit including a first semiconductor layer having a first conductivity and a metal layer formed on the first semiconductor layer;
two or more bonding layers for electrically connecting the light emitting units and electrode unit, respectively; and
an insulation layer located below the bonding layers,
wherein:
each bonding layer has a first region on which the light emitting units and the electrode unit are arranged, and a second region having a larger planar area than that of the first region and being electrically connected to an external substrate; and
the second region of each bonding layer is spaced apart from the second regions of the other bonding layers on a planar surface of the insulation layer.