US 12,249,592 B2
Dynamic bonding gap control and tool for wafer bonding
Han-De Chen, Hsinchu (TW); Cheng-I Chu, Taipei (TW); Yun Chen Teng, New Taipei (TW); Chen-Fong Tsai, Hsinchu (TW); Jyh-Cherng Sheu, Hsinchu (TW); Huicheng Chang, Tainan (TW); and Yee-Chia Yeo, Hsinchu (TW)
Assigned to Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed on Jan. 18, 2022, as Appl. No. 17/648,236.
Claims priority of provisional application 63/219,915, filed on Jul. 9, 2021.
Prior Publication US 2023/0019415 A1, Jan. 19, 2023
Int. Cl. H01L 21/00 (2006.01); H01L 21/66 (2006.01); H01L 23/00 (2006.01)
CPC H01L 24/94 (2013.01) [H01L 22/12 (2013.01); H01L 24/741 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method comprising:
placing a first wafer on a first wafer stage;
placing a second wafer on a second wafer stage in opposition to the first wafer stage;
pushing a center portion of the first wafer to contact the second wafer, wherein a bonding wave propagates from the center portion to edge portions of the first wafer and the second wafer; and
when the bonding wave propagates from the center portion to the edge portions of the first wafer and the second wafer, reducing a stage gap between the first wafer stage and the second wafer stage.