US 12,249,588 B2
Semiconductor device and methods of manufacture
Hung-Chun Cho, Hsinchu (TW); Hung-Jui Kuo, Hsinchu (TW); Yu-Hsiang Hu, Hsinchu (TW); and Sih-Hao Liao, New Taipei (TW)
Assigned to Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed on Mar. 13, 2023, as Appl. No. 18/182,470.
Application 18/182,470 is a division of application No. 17/206,442, filed on Mar. 19, 2021, granted, now 11,605,607.
Prior Publication US 2023/0215831 A1, Jul. 6, 2023
Int. Cl. H01L 23/00 (2006.01); H01L 23/29 (2006.01); H01L 25/00 (2006.01); H01L 25/065 (2023.01); H01L 25/18 (2023.01); H01L 21/56 (2006.01)
CPC H01L 24/20 (2013.01) [H01L 23/295 (2013.01); H01L 23/296 (2013.01); H01L 24/19 (2013.01); H01L 24/82 (2013.01); H01L 24/96 (2013.01); H01L 25/0652 (2013.01); H01L 25/18 (2013.01); H01L 25/50 (2013.01); H01L 21/561 (2013.01); H01L 24/73 (2013.01); H01L 2224/19 (2013.01); H01L 2224/21 (2013.01); H01L 2224/2101 (2013.01); H01L 2224/24105 (2013.01); H01L 2224/24146 (2013.01); H01L 2224/73204 (2013.01); H01L 2224/73259 (2013.01); H01L 2224/73267 (2013.01); H01L 2224/82051 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method, comprising:
forming a conductive feature adjacent to a substrate;
treating the conductive feature with a protective material, the protective material comprising an inorganic core with an organic coating around the inorganic core, the treating the conductive feature comprising forming a protective layer over the conductive feature;
after treating the conductive feature, performing a rinse to remove some of the protective material; and
forming an encapsulant around the conductive feature and the protective layer.