US 12,249,587 B2
Semiconductor structure and forming method thereof
Jiun-Yi Wu, Taoyuan (TW); Chen-Hua Yu, Hsinchu (TW); Yu-Min Liang, Taoyuan (TW); and Jung-Wei Cheng, Hsinchu (TW)
Assigned to Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed on Feb. 16, 2022, as Appl. No. 17/672,729.
Prior Publication US 2023/0260945 A1, Aug. 17, 2023
Int. Cl. H01L 23/48 (2006.01); H01L 21/56 (2006.01); H01L 23/00 (2006.01); H01L 23/498 (2006.01); H01L 25/00 (2006.01); H01L 25/065 (2023.01); H01L 25/10 (2006.01)
CPC H01L 24/20 (2013.01) [H01L 21/565 (2013.01); H01L 23/481 (2013.01); H01L 23/49822 (2013.01); H01L 24/19 (2013.01); H01L 24/24 (2013.01); H01L 24/27 (2013.01); H01L 24/32 (2013.01); H01L 24/73 (2013.01); H01L 25/0655 (2013.01); H01L 25/105 (2013.01); H01L 25/50 (2013.01); H01L 2224/221 (2013.01); H01L 2224/24225 (2013.01); H01L 2224/2783 (2013.01); H01L 2224/32057 (2013.01); H01L 2224/32225 (2013.01); H01L 2224/73267 (2013.01); H01L 2225/1058 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor structure, comprising:
a substrate component;
an integrated circuit (IC) die component disposed over the substrate component; and
a composite redistribution structure interposed between and electrically coupled to the substrate component and the IC die component, the composite redistribution structure comprising:
a first redistribution structure overlying the substrate component;
a second redistribution structure underlying the IC die component;
a local interconnect component disposed between the first and second redistribution structures, the local interconnect component comprising:
through substrate vias (TSVs) penetrating through a semiconductor substrate;
first conductive connectors interposed between the first redistribution structure and a first side of the semiconductor substrate;
second conductive connectors interposed between the second redistribution structure and a second side of the semiconductor substrate which is opposite to the first side, and the TSVs being electrically coupled to the first and second conductive connectors; and
a first insulating layer interposed between the first redistribution structure and the first side of the semiconductor substrate and laterally covering the first conductive connectors; and
an insulating encapsulation interposed between the first and second redistribution structures and embedding the local interconnect component therein.