US 12,249,585 B2
Semiconductor device package
Wen Hung Huang, Kaohsiung (TW)
Assigned to ADVANCED SEMICONDUCTOR ENGINEERING, INC., Kaohsiung (TW)
Filed by Advanced Semiconductor Engineering, Inc., Kaohsiung (TW)
Filed on Feb. 20, 2024, as Appl. No. 18/582,586.
Application 18/582,586 is a continuation of application No. 17/724,422, filed on Apr. 19, 2022, granted, now 11,908,815.
Application 17/724,422 is a continuation of application No. 16/833,330, filed on Mar. 27, 2020, granted, now 11,309,264.
Prior Publication US 2024/0194620 A1, Jun. 13, 2024
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 23/66 (2006.01); H01L 21/48 (2006.01); H01L 21/56 (2006.01); H01L 23/00 (2006.01); H01L 23/31 (2006.01); H01L 23/498 (2006.01); H01Q 1/22 (2006.01)
CPC H01L 23/66 (2013.01) [H01L 21/4857 (2013.01); H01L 21/565 (2013.01); H01L 23/3121 (2013.01); H01L 23/49822 (2013.01); H01L 23/49838 (2013.01); H01L 23/562 (2013.01); H01Q 1/2283 (2013.01); H01L 2223/6677 (2013.01)] 20 Claims
OG exemplary drawing
 
1. An antenna structure, comprising:
an antenna region having a first thickness, the antenna region comprising a first antenna and a second antenna configured to be operated with different frequencies; and
a circuit region disposed over the antenna region and having a second thickness less than the first thickness of the antenna region.
 
7. An antenna structure, comprising:
an antenna layer including a first dielectric layer having a first coefficient of thermal expansion (CTE);
a circuit layer including a second dielectric layer having a second CTE less than the first CTE; and
a connection layer connecting the antenna layer to the circuit layer, wherein a material of the connection layer is different from a material of the first dielectric layer and the second dielectric layer.
 
14. An antenna structure, comprising:
an antenna layer comprising a first dielectric layer having a first CTE and a first width; and
a first circuit layer disposed over the antenna layer and comprising a second dielectric layer, wherein the second dielectric layer has a second CTE less than the first CTE and a second width less than the first width.