US 12,249,578 B2
Semiconductor package structure and method for manufacturing the same
Hsu-Nan Fang, Kaohsiung (TW)
Assigned to ADVANCED SEMICONDUCTOR ENGINEERING, INC., Kaohsiung (TW)
Filed by Advanced Semiconductor Engineering, Inc., Kaohsiung (TW)
Filed on Jun. 23, 2021, as Appl. No. 17/356,199.
Prior Publication US 2022/0415799 A1, Dec. 29, 2022
Int. Cl. H01L 23/535 (2006.01); H01L 23/00 (2006.01); H01L 25/16 (2023.01)
CPC H01L 23/535 (2013.01) [H01L 24/32 (2013.01); H01L 25/16 (2013.01); H01L 24/73 (2013.01); H01L 24/83 (2013.01); H01L 2224/32145 (2013.01); H01L 2224/73253 (2013.01); H01L 2224/83896 (2013.01); H01L 2924/19015 (2013.01); H01L 2924/19041 (2013.01)] 5 Claims
OG exemplary drawing
 
1. A semiconductor package structure, comprising:
an electronic component having a first surface, a second surface opposite to the first surface and a circuit structure closer to the first surface than to the second surface, wherein the electronic component is a semiconductor die comprising a transistor;
a passive component connected to the second surface of the electronic component; and
a conductive element extending into the electronic component and configured to electrically connect the circuit structure with the passive component,
wherein the passive component comprises a conductive structure, and the conductive element is disposed within the passive component and electrically connected to the conductive structure, and wherein the conductive element has a first portion within the electronic component, and the first portion is tapered toward the first surface of the electronic component,
and wherein the conductive element has a second portion within the passive component, and a sidewall of the first portion is substantially aligned with a sidewall of the second portion in a cross-sectional view,
and wherein the electronic component comprises a conductive via electrically connected to the conductive element, and an interface between the conductive via and the first portion of the conductive element is closer to the second surface of the electronic component than to the first surface of the electronic component.