| CPC H01L 23/49844 (2013.01) [H01L 23/3121 (2013.01); H01L 23/367 (2013.01); H01L 23/49811 (2013.01)] | 20 Claims |
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1. A semiconductor device comprising:
a first wiring layer having a first main surface facing a thickness direction;
a second wiring layer having a second main surface facing a same side as the first main surface in the thickness direction and being located away from the first wiring layer in a first direction orthogonal to the thickness direction;
a first semiconductor element having a first main surface electrode provided on a side facing the first main surface in the thickness direction, the first semiconductor element being bonded to the first main surface;
a second semiconductor element having a second main surface electrode provided on a side facing the second main surface in the thickness direction, the second semiconductor element being bonded to the second main surface;
a first terminal electrically connected to the second main surface electrode;
a second terminal electrically connected to the first main surface electrode;
a first conductive member bonded to the first main surface electrode and the second main surface; and
a second conductive member bonded to the second main surface electrode and the first terminal;
a third conductive member bonded to the second main surface and to the second terminal,
wherein the first terminal is located away from the first wiring layer on the side facing the first main surface in the thickness direction,
wherein the second terminal is located on a side opposite to the first wiring layer in the first direction with respect to the second semiconductor element, and is located away from the second wiring layer on the side facing the first main surface in the thickness direction,
wherein the third conductive member includes a plurality of wires or a metal clip, and
wherein the second conductive member overlaps the first wiring layer when viewed along the thickness direction.
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