US 12,249,569 B1
Semiconductor device with uneven electrode surface and method for fabricating the same
Tsu-Chieh Ai, Taitung (TW)
Assigned to NANYA TECHNOLOGY CORPORATION, New Taipei (TW)
Filed by NANYA TECHNOLOGY CORPORATION, New Taipei (TW)
Filed on Jun. 19, 2024, as Appl. No. 18/747,615.
Application 18/747,615 is a division of application No. 18/124,763, filed on Mar. 22, 2023, granted, now 12,176,281.
Application 18/124,763 is a division of application No. 17/484,485, filed on Sep. 24, 2021, granted, now 11,823,992.
Int. Cl. H01G 4/012 (2006.01); H01G 4/33 (2006.01); H01L 21/768 (2006.01); H01L 23/498 (2006.01); H01L 23/522 (2006.01); H01L 49/02 (2006.01)
CPC H01L 23/49838 (2013.01) [H01G 4/012 (2013.01); H01G 4/33 (2013.01); H01L 21/76838 (2013.01); H01L 23/5223 (2013.01); H01L 28/92 (2013.01)] 9 Claims
OG exemplary drawing
 
1. A method for fabricating a semiconductor device, comprising:
providing a substrate;
forming a bottom conductive layer on the substrate;
patterning the bottom conductive layer to form at least one bottom conductive protrusion and at least one bottom recess adjacent to the bottom conductive protrusion;
forming an insulator layer on the bottom conductive layer and on the at least one bottom conductive protrusion, and forming at least one bottom insulating protrusion filling the at least one bottom recess;
patterning the insulator layer to form at least one top insulating protrusion and at least one top recess adjacent to the top insulating protrusion; and
forming a top conductive layer on the insulator layer and on the at least one top insulating protrusion, and forming at least one top conductive protrusion filling the at least one top recess;
wherein the bottom conductive layer, the at least one bottom conductive protrusion, the insulator layer, the at least one bottom insulating protrusion, the at least one top insulating protrusion, the top conductive layer, and the at least one top conductive protrusion together configure a capacitor structure.