US 12,249,568 B2
Metallization structure
Chia-Kuei Hsu, Hsinchu (TW); Ming-Chih Yew, Hsinchu (TW); Shu-Shen Yeh, Taoyuan (TW); Po-Yao Lin, Hsinchu County (TW); and Shin-Puu Jeng, Hsinchu (TW)
Assigned to Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed on Jul. 31, 2023, as Appl. No. 18/361,933.
Application 18/361,933 is a division of application No. 17/344,982, filed on Jun. 11, 2021, granted, now 11,830,800.
Claims priority of provisional application 63/166,232, filed on Mar. 25, 2021.
Prior Publication US 2023/0378046 A1, Nov. 23, 2023
Int. Cl. H01L 23/48 (2006.01); H01L 23/00 (2006.01); H01L 23/498 (2006.01); H01L 21/56 (2006.01)
CPC H01L 23/49838 (2013.01) [H01L 23/49816 (2013.01); H01L 23/49822 (2013.01); H01L 24/16 (2013.01); H01L 21/561 (2013.01); H01L 21/568 (2013.01); H01L 2224/16225 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A metallization structure of a redistribution circuit structure electrically connected to a semiconductor die through a conductive bump, the semiconductor die being disposed on a die bonding area of the redistribution circuit structure, and the metallization structure comprising:
an oblong-shaped or elliptical-shaped redistribution pad;
a conductive via disposed on the oblong-shaped or elliptical-shaped redistribution pad; and
an under bump metallurgy (UBM) covering the conductive via, wherein the conductive bump is disposed on the UBM,
wherein the die bonding area of the redistribution circuit structure covered by the semiconductor die is categorized into quadrants I, II, II, and IV by Cartesian coordinate with a center of the die bonding area as origin, and
wherein a first orientation of the oblong-shaped or elliptical-shaped redistribution pads located on quadrant I is different from a second orientation of oblong-shaped or elliptical-shaped redistribution pads located on quadrant II.