US 12,249,555 B2
Semiconductor device package including a thermal conductive layer and methods of forming the same
Cheng-Chin Lee, Taipei (TW); Cherng-Shiaw Tsai, New Taipei (TW); Shao-Kuan Lee, Kaohsiung (TW); Hsiao-kang Chang, Hsinchu (TW); Hsin-Yen Huang, New Taipei (TW); and Shau-Lin Shue, Hsinchu (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed on Jul. 20, 2021, as Appl. No. 17/380,360.
Claims priority of provisional application 63/166,176, filed on Mar. 25, 2021.
Prior Publication US 2022/0310477 A1, Sep. 29, 2022
Int. Cl. H01L 23/373 (2006.01); H01L 21/768 (2006.01); H01L 23/00 (2006.01); H01L 23/498 (2006.01)
CPC H01L 23/373 (2013.01) [H01L 21/76802 (2013.01); H01L 23/49811 (2013.01); H01L 23/49838 (2013.01); H01L 24/14 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method, comprising:
forming a first semiconductor device structure, comprising:
forming two or more first devices on a first substrate;
forming a first interconnection structure over the first substrate and the two or more devices;
forming first openings in the first substrate and the first interconnection structure between adjacent devices of the two or more first devices; and
forming a thermal conductive layer in the first openings and on the first substrate, wherein the thermal conductive layer is formed by a single deposition process and is electrically isolated from the two or more first devices, and the thermal conductive layer covers an entire back side of the first substrate;
forming a second semiconductor device structure, comprising:
forming two or more second devices on a second substrate;
forming a second interconnection structure over the second substrate and the two or more second devices;
forming second openings in the second substrate and the second interconnection structure between adjacent devices of the two or more second devices; and
forming thermal conductive features in the second openings, wherein the thermal conductive features are electrically isolated from the two or more second devices; and
bonding the first semiconductor device structure to the second semiconductor device structure.