US 12,249,551 B2
Power semiconductor device
Roman Baburske, Otterfing (DE); Moritz Hauf, Munich (DE); Hans-Joachim Schulze, Taufkirchen (DE); Holger Schulze, Villach (AT); and Benedikt Stoib, Feldkirchen-Westerham (DE)
Assigned to Infineon Technologies AG, Neubiberg (DE)
Filed by Infineon Technologies AG, Neubiberg (DE)
Filed on May 11, 2022, as Appl. No. 17/741,527.
Claims priority of application No. 102021002618.7 (DE), filed on May 19, 2021.
Prior Publication US 2022/0375811 A1, Nov. 24, 2022
Int. Cl. H01L 23/367 (2006.01); H01L 27/07 (2006.01); H01L 29/78 (2006.01); H01L 29/861 (2006.01); H01L 29/739 (2006.01)
CPC H01L 23/367 (2013.01) [H01L 27/0727 (2013.01); H01L 29/7811 (2013.01); H01L 29/861 (2013.01); H01L 29/7397 (2013.01); H01L 29/7813 (2013.01)] 21 Claims
OG exemplary drawing
 
1. A power semiconductor device, comprising:
a semiconductor body having a front side and a backside;
a first load terminal structure coupled to the front side and a second load terminal structure coupled to the backside;
an active area of the semiconductor body configured to conduct a load current between the first load terminal structure and the second load terminal structure;
a drift region of the semiconductor body, the drift region having a first conductivity type and configured to conduct the load current; and
a backside region of the semiconductor body, the backside region arranged at the backside and comprising, inside the active area, a first backside emitter zone and a second backside emitter zone,
wherein the first backside emitter zone is arranged within the active area with greater distance to an outer border of the active area than the second backside emitter zone,
wherein the first backside emitter zone comprises a plurality of first sectors each comprising at least one first region of a second conductivity type, the first region arranged in contact with the second load terminal structure,
wherein the second backside emitter zone comprises a plurality of second sectors each comprising at least one second region of the second conductivity type, the second regions arranged in contact with the second load terminal structure,
wherein a pitch defining a lattice constant along at least a first lateral direction is at least essentially equal in the first backside emitter zone and the second backside emitter zone,
wherein the first backside emitter zone differs from the second backside emitter zone in a smallest lateral extension of the first sectors being greater than a smallest lateral extension of the second sectors.