US 12,249,548 B2
Semiconductor device and method for fabricating the same
Sang Young Lee, Seoul (KR); Kyung Woong Park, Gyeonggi-do (KR); and Han Joon Kim, Gyeonggi-do (KR)
Assigned to SK hynix Inc., Gyeonggi-do (KR)
Filed by SK hynix Inc., Gyeonggi-do (KR)
Filed on Nov. 15, 2022, as Appl. No. 17/987,135.
Application 17/987,135 is a continuation of application No. 17/189,536, filed on Mar. 2, 2021, granted, now 11,532,527.
Application 17/189,536 is a continuation of application No. 16/233,907, filed on Dec. 27, 2018, granted, now 10,964,614, issued on Mar. 30, 2021.
Claims priority of application No. 10-2018-0116441 (KR), filed on Sep. 28, 2018.
Prior Publication US 2023/0080939 A1, Mar. 16, 2023
Int. Cl. H01L 23/29 (2006.01); H01L 23/532 (2006.01); H01L 49/02 (2006.01); H10B 12/00 (2023.01)
CPC H01L 23/291 (2013.01) [H01L 23/5329 (2013.01); H01L 28/40 (2013.01); H10B 12/00 (2023.02)] 8 Claims
OG exemplary drawing
 
1. A capacitor comprising:
a bottom electrode;
a first niobium oxide layer on the bottom electrode;
a first titanium oxide layer on the first niobium oxide layer;
a dielectric layer over the first titanium oxide layer;
a top electrode over the dielectric layer;
a second titanium oxide layer disposed between the dielectric layer and the top electrode; and
a second niobium oxide layer disposed between the second titanium oxide layer and the top electrode,
wherein the second niobium oxide layer has a larger vertical thickness than the second titanium oxide layer.