US 12,249,547 B2
Bonded substrate and bonded substrate manufacturing method
Takashi Ebigase, Nagoya (JP); Izumi Masuda, Kitanagoya (JP); and Takeshi Kaku, Nagoya (JP)
Assigned to NGK INSULATORS, LTD., Nagoya (JP)
Filed by NGK INSULATORS, LTD., Nagoya (JP)
Filed on May 25, 2022, as Appl. No. 17/752,937.
Application 17/752,937 is a continuation of application No. PCT/JP2020/045073, filed on Dec. 3, 2020.
Claims priority of application No. PCT/JP2019/047117 (WO), filed on Dec. 3, 2019.
Prior Publication US 2022/0285238 A1, Sep. 8, 2022
Int. Cl. H01L 23/15 (2006.01); C04B 35/584 (2006.01); H01L 23/373 (2006.01); H05K 1/03 (2006.01)
CPC H01L 23/15 (2013.01) [C04B 35/584 (2013.01); H01L 23/3735 (2013.01); H05K 1/0306 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A bonded substrate comprising:
a silicon nitride ceramic substrate;
a copper plate disposed over a main surface of the silicon nitride ceramic substrate, and patterned into a predetermined shape;
a bonding layer disposed on the main surface according to the shape into which the copper plate is patterned, and bonding the copper plate to the main surface; and
a plurality of penetrating regions each including one or more penetrating portions penetrating continuously from the main surface into the silicon nitride ceramic substrate to a depth of 3 μm or more and 20 μm or less, wherein
the penetrating regions contain silver, and the number of penetrating regions present per square millimeter of the main surface is one or more and 30 or less.