US 12,249,542 B2
Semiconductor device structure with an interconnect structure in a dielectric layer with multiple hydrophobic layers along sidewalls of the dielectric layer, and method for forming the same
Chun-Hao Kung, Hsinchu (TW); Chih-Chieh Chang, Zhubei (TW); Kao-Feng Liao, Hsinchu (TW); Hui-Chi Huang, Zhubei (TW); and Kei-Wei Chen, Tainan (TW)
Assigned to Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed on Nov. 17, 2023, as Appl. No. 18/512,682.
Application 18/512,682 is a continuation of application No. 17/869,560, filed on Jul. 20, 2022, granted, now 11,854,872.
Application 17/869,560 is a continuation of application No. 16/382,641, filed on Apr. 12, 2019, granted, now 11,417,566, issued on Aug. 16, 2022.
Claims priority of provisional application 62/712,335, filed on Jul. 31, 2018.
Prior Publication US 2024/0087951 A1, Mar. 14, 2024
Int. Cl. H01L 21/768 (2006.01); H01L 21/02 (2006.01); H01L 29/66 (2006.01)
CPC H01L 21/76831 (2013.01) [H01L 21/76814 (2013.01); H01L 21/7684 (2013.01); H01L 21/76877 (2013.01); H01L 21/02211 (2013.01); H01L 21/76843 (2013.01); H01L 29/66795 (2013.01)] 20 Claims
OG exemplary drawing
 
15. A method comprising:
patterning a trench in a first dielectric layer, wherein the trench has first sidewalls;
treating the first sidewalls of the first dielectric layer to form a first silicon oxide based hydrophobic layer extending along the first sidewalls of the trench, the first silicon oxide based hydrophobic layer having second sidewalls;
depositing a first metal material in physical contact with the second sidewalls, the first metal material being separated from the first dielectric layer by the first silicon oxide based hydrophobic layer;
treating the second sidewalls of the first silicon oxide based hydrophobic layer to form a second silicon oxide based hydrophobic layer in physical contact with the second sidewalls and the first metal material, the second silicon oxide based hydrophobic layer having third sidewalls;
depositing a second metal material in physical contact with the third sidewalls and the first metal material;
treating the third sidewalls of the second silicon oxide based hydrophobic layer to form a third silicon oxide based hydrophobic layer in physical contact with the third sidewalls and the second metal material, the third silicon oxide based hydrophobic layer having fourth sidewalls; and
forming a third metal material in physical contact with the fourth sidewalls and the second metal material.