US 12,249,539 B2
Multigate device structure with engineered cladding and method making the same
Shu-Wen Shen, Hsinchu (TW); Jiun-Ming Kuo, Taipei (TW); Yuan-Ching Peng, Hsinchu (TW); Ji-Xuan Yang, Tainan (TW); Jheng-Wei Lin, Hsinchu (TW); and Chien-Hung Chen, Hsinchu (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed on Jun. 7, 2022, as Appl. No. 17/805,715.
Claims priority of provisional application 63/286,306, filed on Dec. 6, 2021.
Prior Publication US 2023/0178418 A1, Jun. 8, 2023
Int. Cl. H01L 21/762 (2006.01); H01L 21/02 (2006.01); H01L 29/06 (2006.01); H01L 29/423 (2006.01); H01L 29/66 (2006.01); H01L 29/775 (2006.01); H01L 29/786 (2006.01)
CPC H01L 21/76224 (2013.01) [H01L 21/02164 (2013.01); H01L 21/0217 (2013.01); H01L 21/02247 (2013.01); H01L 21/02532 (2013.01); H01L 21/02603 (2013.01); H01L 29/0673 (2013.01); H01L 29/42392 (2013.01); H01L 29/66439 (2013.01); H01L 29/66545 (2013.01); H01L 29/66742 (2013.01); H01L 29/775 (2013.01); H01L 29/78696 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method, comprising:
forming a semiconductor stack on a substrate, wherein the semiconductor stack includes first semiconductor layers of a first semiconductor material and second semiconductor layers of a second semiconductor material alternatively stacked on the substrate;
patterning the semiconductor stack and the substrate to form a trench and an active region being adjacent the trench;
epitaxially growing a liner of the first semiconductor material on sidewalls of the trench and sidewalls of the active region;
forming an isolation feature in the trench;
performing a rapid thermal nitridation process, thereby converting the liner into a silicon nitride layer; and
forming a cladding layer of the second semiconductor material over the silicon nitride layer.