US 12,249,532 B2
Multi-level micro-device tethers
Christopher Andrew Bower, Raleigh, NC (US); Matthew Meitl, Durham, NC (US); Salvatore Bonafede, Chapel Hill, NC (US); Brook Raymond, Cary, NC (US); and Carl Ray Prevatte, Jr., Raleigh, NC (US)
Assigned to X Display Company Technology Limited, Dublin (IE)
Filed by X Display Company Technology Limited, Dublin (IE)
Filed on Apr. 27, 2023, as Appl. No. 18/140,427.
Application 16/921,556 is a division of application No. 16/058,097, filed on Aug. 8, 2018, granted, now 10,832,935, issued on Nov. 10, 2020.
Application 18/140,427 is a continuation of application No. 16/921,556, filed on Jul. 6, 2020, granted, now 11,670,533.
Claims priority of provisional application 62/545,413, filed on Aug. 14, 2017.
Prior Publication US 2023/0343630 A1, Oct. 26, 2023
Int. Cl. H01L 21/683 (2006.01); B41F 16/00 (2006.01); H01L 21/67 (2006.01); H01L 33/00 (2010.01); H01L 27/15 (2006.01)
CPC H01L 21/6835 (2013.01) [B41F 16/00 (2013.01); H01L 21/67144 (2013.01); H01L 33/0093 (2020.05); H01L 33/0095 (2013.01); H01L 27/15 (2013.01); H01L 2221/68359 (2013.01); H01L 2221/68363 (2013.01); H01L 2221/68381 (2013.01)] 14 Claims
OG exemplary drawing
 
1. A device structure, comprising:
a lower layer comprising a semiconductor material having a lateral extent;
a patterned upper layer comprising an electrically controllable semiconductor device disposed entirely on the lower layer, wherein the semiconductor device-comprises the semiconductor material and the patterned upper layer has a lateral extent less than or equal to the lateral extent of the lower layer; and
a physically continuous tether structure comprising (i) a tether device portion at least partly on the upper layer and the lower layer and (ii) a fractured tether adjacent to and in a common layer with the lower layer.